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| CMPD2005S SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2005S contains two (2) High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a SOT-23 surface mount package, designed for applications requiring high voltage capability. MARKING CODE: DB5 SOT-23 CASE MAXIMUM RATINGS (TA=25 C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Peak Repetitive Reverse Current Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp= 1 s Forward Surge Current, tp= 1s Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IO IF IFRM IFSM IFSM PD TJ,Tstg JA 300 350 200 225 625 4.0 1.0 350 -65 to +150 357 UNITS V V mA mA mA A A mW C C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted) SYMBOL IR IR BVR VF VF VF CT trr TEST CONDITIONS VR=280V VR=280V, TA=150C IR=100A IF=20mA IF=100mA IF=200mA VR=0, f=1.0 MHz IR=IF=30mA, Rec. to 3.0mA, RL=100 350 0.87 1.0 1.25 5.0 50 MIN TYP MAX 100 100 UNITS nA A V V V V pF ns R1 (6-August 2003) Central TM CMPD2005S SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES Semiconductor Corp. SOT-23 CASE - MECHANICAL OUTLINE MARKING CODE: DB5 2 1 D1 D2 3 LEAD CODE: 1) Anode D2 2) Cathode D1 3) Anode D1, Cathode D2 R1 (6-August 2003) |
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